Back to results
US 4,062,040 AGranted
Field effect transistor structure and method for making same
AssigneeIBM Corporation
InventorsShakir Ahmed Abbas, Robert Charles Dockerty
Life of this patent
Estimating the term…
Abstract
An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.
Claims2
In a field effect transistor which includes a composite silicon dioxide-silicon nitride insulating layer over the active regions thereof;
- a field shield electrode of polycrystalline silicon over a portion of said composite layer;
- a conductive silicon dioxide layer over the upper and sidewall surfaces of said field shield;
- and
- a gate electrode disposed over said composite layer and insulated from said field shield by said conductive silicon dioxide layer;
- the improvement comprising;
- a layer of highly resistive material disposed between said conductive silicon dioxide layer and said silicon nitride layer;
- said material selected from group consisting of silicon oxynitride and silicon dioxide.
4 more elements
Dependencies are inferred from the claim text.