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US 4,062,035 AGranted
Luminescent diode
AssigneeSiemens Aktiengesellschaft
InventorGuenter Winstel
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AssigneeSiemens Aktiengesellschaft
InventorGuenter Winstel
Estimating the term…
A semiconductor luminescent device is disclosed of the MIS type which has a semiconductor body, a semiconductor monocrystalline insulating layer on one surface of the body and an electrode on the outer major surface of the insulating layer, which electrode is light transmissive. The crystal structure of the insulating layer is substantially the same as the crystal structure of the semiconductor body and has a spacing of energy bands which is greater than the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body. The interval of the energy bands of the insulating layer is at least 2 kT greater than the interval of the energy bands of the semiconductor body. It is preferable that the crystal structure of the insulating layer have a deviation of its lattice interval of less than 1% from that of the semiconductor body.
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on this semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, and having a spacing of energy bands which is greater than the energy of the light quanta which are emitted during a radiative recombination of charge carriers in the semiconductor body.
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material on said semiconductor body, and a layer of conductive material arranged upon said insulating layer, the layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2KT larger than the band spacing of said semiconductor body.
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%.
A semiconductor luminescent diode comprising a semiconductor body, a layer of insulating material interfaced with one surface of said semiconductor body, and a layer of conductive material formed on the outer surface of said insulating layer and interfaced therewith, said insulating layer having substantially the same lattice interval as the lattice interval of said semiconductor body and deviating therefrom by less than 1%, said layer of insulating material being monocrystalline having the crystal structure of the semiconductor body, the band spacing of the energy bands of said insulating layer being at least 2kT larger than the band spacing of said semiconductor body.
Dependencies are inferred from the claim text.