Correcting doping defects
AssigneeTexas Instruments Incorporated
InventorDavid Joal McElroy
Life of this patent
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Abstract
A semiconductive device and a method for producing the semiconductive device, wherein random defects or inaccuracies in precise registrations of certain patterns are compensated by the introduction of selected impurities. The selected impurities bring about changes in the electrical characteristics of those portions of the semiconductor affected by the random defects or registration inaccuracies so as to prevent them from causing malfunctions in the completed devices.
Claims22
In the method of manufacturing semiconductor devices having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of identifying devices which are latently defective due to excessive misalignment of one or more pair of interrelated regions by introducing selected impurities to those segments which are excessively misaligned, said selected impurities being of a conductivity type effecting electrical characteristics similar to those predominant ambient surface impurities which with the passage of time tend to render the device inoperative by degrading the operating characteristics of those portions of the device which are misaligned, said selected impurities being introduced in quantities sufficient to complete the said degradation but less than sufficient to degrade the operating characteristics of portions which are not misaligned.
In the manufacture of semiconductor devices of the type having insulating coatings thereon of various thicknesses and a pattern of metalligation thereon, the step of compensating for misalignment of patterns used in masking steps by subjecting the devices to an ion implantation process after the pattern of metallization has been applied to penetrate the thinnest of the insulating coatings, but not the thicker insulating coatings or metallization.
In the method of manufacturing a semiconductor device having particular portions determining the operative characteristics thereof, and wherein said method includes the step of precisely locating at least one of said portions with respect to another, the improvement of compensating for mislocations of said portions by introducing selected impurities to at least those segments of the portions that are mislocated.
Dependencies are inferred from the claim text.