Method of improving ohmic contact through high-resistance oxide film
AssigneeTyco Filters Division, Inc.
InventorsVirgil E. Bottom, Robert E. Christian
Life of this patent
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Abstract
A novel method is described for improving the ohmic contact through a relatively high electrical-resistance oxide film formed on at least one of two materials joined together to provide a low-resistance electrical junction. A current pulse of sufficient magnitude and duration is directed through the junction so that the oxide film breaks down and so that normal operating currents can then pass through the junction between the two materials.
Claims5
A method of making improved ohmic contact between at least one aluminum contact of a quartz crystal resonator and an electrically-conductive material comprising the steps of:
- forming an aluminum oxide coating on said aluminum contact;
- coupling a wire lead to said contact with said electrically-conductive material;
- and
- discharging a current pulse of a predetermined magnitude and duration through said electrically-conductive material and said aluminum oxide coating so as to form a low electrical resistance ohmic path between said aluminum contact and said electrically-conductive material.
A method of making an improved ohmic contact through an aluminum oxide film formed between each aluminum contact of a quartz crystal resonator and a corresponding channeled end of a wire lead of an integrated base assembly supporting said resonator, said method comprising the steps of:
- mounting said resonator to said integrated base so that said resonator is received by and conductively secured to the channeled end of said wire lead;
- discharging a current pulse through said aluminum oxide film so as to form a low electrical resistance ohmic path between said aluminum contact and said wire lead.
Dependencies are inferred from the claim text.