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US 4,060,828 AGranted
Semiconductor device having multi-layer wiring structure with additional through-hole interconnection
AssigneeHitachi, Ltd.
InventorKoichiro Satonaka
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between the wiring layer having a bonding pad and the lower wiring layer rarely corrodes or becomes disconnected.
Claims4
A semiconductor device having a multi-layer wiring structure, comprising:
- a. a first wiring layer formed on one main surface of a semiconductor substrate;
- b. a first insulating layer formed on said first wiring layer;
- c. a second wiring layer formed on said first insulating layer;
- d. metal leads bonded to predetermined portions of said second wiring layer;
- and
- e. a second insulating layer formed on the entire surface of said second wiring layer except said predetermined portions of said second wiring layer,
- said first wiring layer being electrically connected with said second wiring layer through first through-holes cut in those portions of said first insulating layer which are just beneath said predetermined portions of said second wiring layer.
4 more elements
A semiconductor device having comprising:
- a. a semiconductor substrate in which desired circuit elements are formed;
- b. a first insulating layer formed on said semiconductor substrate;
- c. at least one wiring layer of the first level formed on said first insulating layer and connected with said circuit elements through the first through-hole cut in said first insulating layer;
- d. a second insulating layer formed on said wiring layer of the first level;
- e. at least one wiring layer of the second level having a bonding pad formed on said second insulating layer;
- f. a metal wire connected with bonding pad of said wiring layer of the second level;
- and
- g. a third insulating layer formed on the entire surface of said wiring layer of the second level except said bonding pad,
- wherein said wiring layer of the first level is electrically connected with said wiring layer of the second level through second through-hole cut in those portions of said second insulating layer which are just beneath said bonding pad of said wiring layer of the second level.
6 more elements
Dependencies are inferred from the claim text.