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US 4,059,537 AGranted
Piezoelectric material
AssigneeRockwell International Corporation
InventorGerald P. Espinosa
Life of this patent
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Abstract
A piezoelectric material and a method of producing a piezoelectric material which has a low temperature coefficient of resonant frequency, a low hysteresis, a high mechanical Q, and is suitable for fabricating into mechanical filters. The material is a compound of the general formula Pb(Zr,Ti)O.sub.3 containing Bi substituting for 2 to 15 atomic percent of the Pb and further containing Mn, Zn, and Ni substituting for up to 4 atomic percent of the Zr and Ti.
Claims1
A piezoelectric material having the following approximate formula:
- (Pb .sub.0.94 Bi .sub.0.06).sub.1 (Zr .sub.0.432 Ti .sub.0.528 Ni .sub.0.02 Mn .sub.0.02).sub.1 O.sub.3,
- and wherein the hysteresis of said material is less than 250 ppm and the temperature coefficient of resonant frequency between -60.degree. C to 100.degree. C is approximately 22 ppm per .degree. C.
Dependencies are inferred from the claim text.