Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques

A method of manufacturing an integrated injection logic semiconductor device in a selected portion of a semiconductor layer comprising the steps of forming said semiconductor layer of the opposite conductivity type on a semiconductor substrate of one conductivity type;

• forming an insulation film on said selected portion of the semiconductor layer;
• forming a first opening through said insulation film;
• doping an impurity of one conductivity type into said selected portion of the semiconductor layer through said first opening thereby forming a first region of said one conductivity type which reaches said semiconductor substrate;
• forming a second opening through said insulation film doping an impurity of the opposite conductivity type into said first region of the one conductivity type and said semiconductor layer of the opposite conductivity type respectively through said first and second openings in an oxidizing atmosphere thereby forming a first region of the opposite conductivity type completely within said first region of said one conductivity type and a second region of the opposite conductivity type in said selected portion of the layer;
• semiconductor forming a third opening through said insulation film doping an impurity of one conductivity type into said selected portion of the semiconductor layer through said third opening in an oxidizing atmosphere thereby forming a second region of said one conductivity type in said semiconductor layer of the opposite conductivity type.