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US 4,058,418 AGranted
Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
AssigneeSolarex Corporation
InventorJoseph Lindmayer
Life of this patent
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Abstract
A method to manufacture thin film solar cell in which a solar cell to convert directly light to electricity is formed by depositing silicon material on a carrier substrate having a coating which is liquid on the deposition temperature. An article manufactured according to this method. A machine for the manufacture of thin film solar cells.
Claims12
A method of making a thin film of substantially monocrystalline silicon suitable for use in silicon solar cells, comprising
- a. providing a carrier having a melting point above the temperature at which the silicon is to be deposited.
- b. applying to the carrier a coating that is maintained in a liquid state at least at the region at which the silicon is to be deposited, said coating comprising an impurity that acts as a dopant for the silicon,
- c. depositing a seed of silicon crystal on the liquid carrier coating,
- d. directing the deposition of silicon on said coating by means that limits the area of said coating subject to deposition,
- e. effecting relative movement between said silicon deposition limiting means and said carrier so that the silicon seed is expanded in a lateral direction into a film of silicon, and
- f. continuing said relative movement at a rate and direction of deposition such that later deposited silicon orients itself to the previously deposited silicon in a lateral and highly ordered form as contrasted with amorphous, epitaxial growth and the dopant in the liquid coating diffuses into the silicon to form a doped layer therein.
3 more elements
A method of making a thin film of substantially monocrystalline silicon suitable for use in silicon solar cells, comprising
- a. providing a carrier having a melting point above the temperature at which the silicon is to be deposited,
- b. applying to the carrier a coating that is maintained in a liquid state at least at the region at which the silicon is to be deposited, said coating comprising an impurity that acts as a dopant for the silicon,
- c. providing means for depositing silicon on said liquid coating from a vapor state,
- d. utilizing a mechanical barrier to direct the deposition of silicon on said coating so that at least initially the field of such deposition expands transversely of said carrier as relative movement is effected between said carrier and said depositing means,
- e. effecting lateral relative movement between said silicon depositing means and said carrier so that silicon is deposited laterally on the coating of said carrier, and
- f. continuing said relative movement at a rate and direction of deposition such that later deposited silicon orients itself to the previously deposited silicon in a lateral and highly ordered manner as contrasted with amorphous, epitaxial growth and the dopant in the liquid coating diffuses into the silicon to form a doped layer therein.
3 more elements
Dependencies are inferred from the claim text.