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US 4,058,413 AGranted
Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsBryant M. Welch, Richard D. Pashley
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Abstract
A method for forming tellurium N-type layers in gallium arsenide by using ion implantation as the doping process and aluminum nitride as a protective overcoat to prevent disassociation of the gallium arsenide during anneal.
Claims1
A process for fabricating semiconductor devices involving the implantation of tellurium as a submicron N-type layer in the surface of a gallium arsenide substrate comprising the steps of:
- a. preparing a cadmium doped P-type gallium arsenide substrate;
- b. implanting a 220 KeV ion dose of tellurium into the surface of said P-type gallium arsenide at 350.degree. C with an incident beam at least 10.degree. from any low-index axis;
- c. sputtering a coating of aluminum nitride onto said implanted surface and
- d. heating said coated surface to a temperature of about 900.degree. C for about 10 minutes in flowing hydrogen to effect an anneal of said implanted surface to form a submicron N-type layer therein.
1 more element
Dependencies are inferred from the claim text.