Q-switching injection laser with oxygen implanted region

A Q-switching GaAs injection laser comprisng a mono-crystalline GaAs semiconductive body including at least one p-n junction with an active lasing region and having distinct emitter and saturable absorber sections, said body including means defining a resonant cavity,

• a single pumping means conductively connected to said body including a single electrode overlying said emitter section only,
• an ion implanted region in said absorber section, implanted with an ion selected from the group consisting of oxygen, chromium and iron, said implanted ion of a dose to provide said implanted region with a doping density at least several times the doping density of said region prior to implantation, said ion implantation dose sufficient to prevent pumping current from leaking from said emitter section to said absorber section.

A Q-switching injection laser comprising,

• a mono-crystalline semiconductive body including at least one p-n junction with an active lasing region having distinct emitter and saturable absorber sections, said body including means for defining a resonant cavity, pumping means conductively connected to said body including a single electrode overlying said laser,
• said saturable absorber section including an ion implanted region of a type, and an amount such that the doping density of said region is at least about twice the doping density of said region prior to implantation, to increase the resistivity of said implanted region, said ion source selected to provide energy levels sufficiently widely separated from the conduction and valence bands of said semiconductive body to prevent thermal excitation from transferring charge carriers from either the conduction or valence bands to or from the energy levels of the implanted ion,
• said ion implantation dosage of an amount to provide said saturable absorber section with a saturable absorber characteristic.