Method and device for the storage of analog signals
AssigneeCommissariat a l'Energie Atomique
InventorsLuc Audaire, Joseph Borel, Vincent Le Goascoz, Robert Poujois
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Abstract
In a method and a device for storing analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage.
Claims1
A method for storing analog signals in integrated circuit memory elements, wherein the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor, comprising the steps of
- performing a discrete sampling of an analog signal at N points,
- applying N writing voltages having values which are proportional to those of each point of the sampled signal to be recorded between the gate and the inversion channel of the multiple dielectric layer transistors which constitute said memory elements, the value of the analog signal at N points being stored in the form of a corresponding threshold voltage in each of said transistors.
Dependencies are inferred from the claim text.