Method and structure for controllng carrier lifetime in semiconductor devices
AssigneeIBM Corporation
InventorsPeter Burr, Richard C. Joy, James F. Ziegler
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Abstract
The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.
Claims14
An integrated semiconductor device in a semiconductor substrate of monocrystalline semiconductor material of a first type conductivity, regions of a second opposite type conductivity, complementary field effect transistors in the substrate and in the regions, the improvement comprising
- at least one region of implanted inert atoms within the device, said inert atoms selected from the group consisting of argon, krypton and xenon that reduce the gain of parasitic transistor action by reducing the minority carrier lifetime, said implanted inert atoms in said region forming substantially immobile recombination centers, said region subjected to a high temperature anneal that substantially recrystallizes any lattice damage resulting from the implantation step, the concentration of said implanted inert atoms being substantially greater than the density of any remaining lattice damage sites.
An integrated circuit semiconductor device in a substrate of a monocrystalline semiconductor material having a plurality of transistor elements, each provided with a collector region, a base region having a flat junction that is parallel to the top surface, and an emitter region, the improvement comprising
- a region of implanted inert atoms within said device in at least the collector region having a significant concentration of atoms selected from the group consisting of argon, krypton and xenon,
- said region of implanted inert atoms in operation reducing the minority carrier lifetime, said implanted inert atoms in said region for forming substantially immobile recombination centers,
- said region subjected to a high temperature anneal that substantially recyrstallizes any lattice damage resulting from the implantation step, the concentration of said implanted inert atoms being substantially greater than the density of any remaining lattice damage sites.
Dependencies are inferred from the claim text.