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US 4,053,924 AGranted
Ion-implanted semiconductor abrupt junction
AssigneeCalifornia Linear Circuits, Inc.
InventorsLeonard F. Roman, George H. Elliott
Life of this patent
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AssigneeCalifornia Linear Circuits, Inc.
InventorsLeonard F. Roman, George H. Elliott
Estimating the term…
A semiconductor abrupt junction having a relatively heavily doped region of first conductivity type, a relatively lightly doped region of opposite conductivity type, and immediately adjacent the effective junction, a thin "recombination layer" of first conductivity type and of dopant concentration intermediate that of the two junction regions. Preferably, the recombination layer overlaps the forward biased depletion region of the junction and has a thickness (typically 50 A to 200 A) much less than that of the junction depletion region under reverse bias. The recombination layer dopant ions thereby provide recombination-generation centers only where beneficial to improve the forward and reverse recovery times of the junction without degrading the steady state reverse current characteristics thereof. By further utilizing a very shallow (less than about 800 A) heavily doped region, very low forward turn-on voltage is achieved. The junction may be fabricated by controlled implantation of dopant ions.
An ion implanted PN junction, having a forward biased depletion region when forward bias is applied across the junction, a reverse biased depletion region when reverse bias is applied across the junction, and a steady state reverse current characteristic, said junction comprising:
A semiconductor junction comprising:
A diode having fast forward and reverse recovery times, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Into semiconductor materials, e.g. for doping: of electrically active species
Diodes
Semiconductor bodies, or regions thereof, of devices having potential barriers: impurity distributions or concentrations
Characterised by the semiconductor materials: into Group IV semiconductors
Term ended 11 Oct 1994 (estimated)
USPTO file history isn’t available for this patent, so only indexed dates are shown.
1. Field of the Invention
The present invention relates to a semiconductor abrupt junction having a thin recombination layer immediately adjacent to the effective junction. More particularly, the invention relates to a semiconductor junction having a shallow, highly doped region of one conductivity type, a relatively lightly doped region of opposite conductivity type and, between the two regions, a thin recombination layer of first conductivity type and of dopant concentration intermediate that of the heavily and lightly doped regions.
2. Description of the Prior Art
Still other objects, features, and attendant advantages of the present invention will become apparent to those skilled in the art from a reading of the following detailed description of the preferred embodiments constructed in accordance therewith, taken in conjunction with the accompanying drawings wherein like numerals designate like parts in the several figures and wherein:
FIG. 1 is a greatly enlarged, sectional view of a diode incorporating a prior art p-n junction which may be fabricated by diffusion techniques;
FIGS. 2a, 2b and 2c are greatly enlarged, idealized representations of the p-n junction of FIG. 1, as seen generally along the lines 2--2 thereof, for unbiased, reverse biased and forward biased condition respectively;