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US 4,053,923 AGranted
Integrated logic elements with improved speed-power characteristics
AssigneeMotorola, Inc.
InventorS. Daniel Kang
Life of this patent
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Abstract
Transistor logic elements with improved switching speed at a given power. The improvement arises from shunting the current-source transistor in a two-transistor gate by a resistor. The integrated embodiment requires no more area than the conventional structure without the resistor.
Claims2
In a monolithic semiconductor circuit comprising a semiconductor body of a first conductivity type,
- a pair of mutually spaced regions in said body and each of a second conductivity type, said regions constituting respectively the emitter and collector regions of a lateral transistor,
- said collector region having therewithin a region of said first conductivity type constituting the collector of an inversely operated vertical transistor,
- said collector region of said lateral transistor constituting the base region of said vertical transistor,
- said semiconductor body constituting the base region of said lateral transistor and the emitter region of said vertical transistor,
- said collector and base regions of said vertical transistor having therebetween a collector base P-N junction,
- said base and emitter regions of said vertical transistor having therebetween a base-emitter P-N junction,
- conductive means for reverse biasing said collectorbase junction and forward biasing said base-emitter junction,
- conductive means for receiving a control signal at the base of said vertical transistor,
- wherein the improvement comprises a shunt resistive means connected between said collector and said emitter of said lateral transistor for increasing the switching speed of said circuit.
6 more elements
Dependencies are inferred from the claim text.