Method for forming a narrow gap
AssigneeIntel Corporation
InventorRichard T. Simko
Life of this patent
Estimating the term…
Abstract
A method for forming a narrow gap in a material in which a first masking layer and a second masking layer are disposed on a layer of material and are selectively removed to expose a portion of the surface of the material. A third masking layer is then disposed on the material. The first and third layers and the material are then selectively etched to form such narrow gap. The portions of the material separated by the gap may be used as MOS integrated circuit gates and a gate may also be formed in the gap by first depositing an insulating layer in the gap and then filling the gap with a conductive material.
Claims14
A method for forming a narrow gap in a material comprising the steps in sequence, of:
- disposing a first masking layer on said material;
- disposing a second masking layer on said first masking layer;
- selectively removing said first and second masking layers to expose a first portion of the surface of said material;
- disposing a third masking layer on at least the exposed first portion of said material, a portion of said third masking layer being in immediate contact with said first masking layer;
- selectively removing after said third masking layer has been disposed said first and third masking layers to expose a second portion of the surface of said material underlying said remaining second masking layer;
- and
- selectively removing through said exposed second portion a preselected amount of said material to form said gap.
A method for forming a narrow gap in a material comprising the steps, in sequence, of:
- disposing a first masking layer on said material;
- disposing a second masking layer on said first masking layer;
- selectively removing said first and second masking layers to expose a first portion of the surface of said material;
- doping the exposed portion of said material, said dopant diffusing under said first masking layer;
- disposing a third masking layer on at least the exposed portion of said material;
- selectively removing said first, second and third masking layers after said third masking layer has been disposed to expose at least the doped portion of said material under said first masking layer;
- and
- removing at least a portion of said doped material to form said gap.
Dependencies are inferred from the claim text.