Semiconductor device having multistepped bump terminal electrodes

A semiconductor device having an improved bump terminal electrode comprising a semiconductor substrate having at least one element and one major surface, an insulator film formed on said major surface, and a bump terminal formed on said insulator film electrically connected through a conductive layer to said element, said bump terminal electrode including a first metal layer, a second metal layer, and a third metal layer of the same material as said second metal layer, said first metal layer being formed on said insulator film and being electrically connected to said conductor layer, said second metal layer being disposed directly on the surface of said first metal layer, said second metal layer not extending beyond said first metal layer, the area of said second metal layer being smaller than that of said first layer, said third metal layer being disposed directly on the surface of said second metal layer, the area of said third metal layer being smaller than that of said second metal layer.