US 4,051,507 A · Semiconductor structures

Abstract

A method of making a number of semiconductor diodes on a single wafer without breakage during handling and processing, comprising the steps of forming a plurality of mesas on one surface of an intrinsic substrate, diffusing a selected first conductivity-type region into each mesa, coating the front surface of the substrate and mesas wiyth oxide, chemically milling recesses into the opposite side of the substrate in alignment with the mesas to a predetermined depth where the mesas are each supported by a thin annular area of substrate material permitting transfer of the device into an epitaxial reactor, gas etching the recesses to a depth beyond the oxide interface to physically separate the mesas from the substrate material, growing a thin epitaxial layer of opposite conductivity type over the back surface of the device, applying ohmic contacts to the device, and separating the individual mesas.

Claims5

Dependent claims

A semiconductor device comprising:

a semiconductor body having a region of different conductivity type layers with surfaces of such layers lying in the <100>
crystallographic plane of the semiconductor body;
such region having wall portions with sides parallel to the <111>
crystallographic plane of the semiconductor body;
such wall portions being disposed along at least a portion of the periphery of the device.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor structures

Life of this patent

Semiconductor structures

Life of this patent

Abstract

Claims5