Complementary semiconductor device

In a complementary semiconductor device comprising

• a. a semiconductor substrate having a first conductivity type and two main surfaces;
• b. a first semiconductor layer having a second conductivity type, opposite said first conductivity type, formed in one of said main surfaces of said substrate;
• c. at least a pair of first and second transistors, said first semiconductor layer serving as both the collector region of one of said transistors and the base region of the other;
• d. a V-shape region for electrically isolating said transistors from each other;
• e. organic insulating material filling said V-shaped region with an inorganic insulating film disposed underneath;
• f. a second semiconductor layer having said second conductivity type, formed between said first semiconductor layer and said surface of said semiconductor substrate;
• and
• g. embedded layers having high impurity concentrations and having said first and second conductivity types, embedded in said second semiconductor layer,
• the improvement wherein said first transistor is a vertical type transistor and said second transistor serves as another vertical type transistor due to the existence of said embedded layer having second conductivity type.

A complementary semiconductor device having a vertical NPN bipolar transistor and a vertical PNP bipolar transistor formed in the same semiconductor body while being isolated from each other, comprising:

• a semiconductor body having a first surface in which there is formed a groove extending from said first surface down to semiconductor material of a first conductivity type so as to separate a portion of said semiconductor body into first and second parts isolated from each other by said groove,
• said first part of said body including
• a first semiconductor region of a second conductivity type, opposite said first conductivity type, extending from said first surface and forming a first PN junction with said semiconductor material, said first semiconductor region constituting the collector region of one of said transistors,
• a second semiconductor region of said first conductivity type, disposed in a surface portion of said first semiconductor region, and constituting the base region of said one transistor, and
• a third semiconductor region of said second conductivity type, disposed in a surface portion of said second semiconductor region and constituting the emitter region of said one transistor, and
• said second part of said body including
• a fourth semiconductor region of said second conductivity type extending from said first surface to a prescribed depth into said semiconductor body, and constituting the base region of the other of said transistors,
• a fifth semiconductor region of said first conductivity type contacting and disposed beneath said fourth semiconductor region and constituting the collector region of said other transistor,
• a sixth semiconductor region of said first conductivity type disposed in a surface portion of said fifth semiconductor region and constituting the emitter of said other transistor, and
• a seventh semiconductor region of said second conductivity type disposed between and adjoining said semiconductor material and said fifth semiconductor region, and
• respective electrodes in ohmic electrical connection with said first, second, third, fourth, fifth and sixth semiconductor regions.