Apparatus for accessing an information storage device having defective memory cells
AssigneeNippon Telegraph & Telephone Public Corporation
InventorsShinichiro Yamada, Akira Ishida, Hisakazu Mukai
Life of this patent
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Abstract
An information storage device comprising an information storage unit consisting of a plurality of memory blocks each consisting of a plurality of memory cells, and means for storing therein the address information uniquely corresponding to said memory blocks including some inoperative memory blocks, whereby when the address information uniquely corresponding to a desired memory block is entered, said address information may be modified with the information stored in said means so that one of the memory blocks not including an inoperative memory cell may be selected.
Claims2
An information storage device capable of being accessed by a memory utilization means, comprising:
- an information storage unit having a given number of memory blocks, each block comprising a plurality of memory cells, one or more of said blocks containing at least one defective cell, each block having a unique address within said memory defined by a digital block address word, each cell being capable of storing a first digital word having an information portion and an address portion identifying the location of said cell within the corresponding block;
- a selection control information register having a number of memory cells equal to a desired number of said blocks to be utilized, said desired number being substantially less than said given number,
- first means for addressing with a second digital address word a selected memory cell of said register to generate a digital block address word in accordance with information in said selected cell;
- second means responsive to the value of said digital block address word to address a corresponding selected block of said storage unit;
- third means for testing each cell of said selected block and for generating a test signal having a first value indicative of the absence of defective cells therein, and a second value indicative of the presence of defective cells therein;
- fourth means responsive to the first value of said test signal for storing said digital block address word in said selection control information register, for identifying the location of said selected block in said storage unit;
- fifth means responsive to said second value of said test signal and coupled to said first means, for changing the value of the digital block address word generated by said first means to test another block of said storage unit corresponding to said changed value of said digital block address word and for actuating said third means;
- and
- sixth means responsive to said first value of said test signal and coupled to said first means, for changing the value of said second digital address word to address another selected memory cell of said register for generating a further digital block address word and for actuating said third means to test the corresponding newly selected block of said storage unit,
- whereby the cells of selected blocks of said storage unit are sequentially tested, and said third means for testing further including means for entering a digital block address word identifying a corresponding operative block in each memory cell of said register to establish a one-to-one correspondence between each value of said second digital address word the address of said corresponding operative block;
- and
- wherein said memory utilization means comprises means for selectively accessing said information storage unit by providing a desired value of said second digital address word to said register to cause the corresponding digital block address word to address a corresponding operative block of said storage unit.
Dependencies are inferred from the claim text.