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US 4,051,437 AGranted
Method and apparatus for semiconductor profiling using an optical probe
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsDerek L. Lile, Neil M. Davis
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Abstract
A method and apparatus of determining defects in semiconductors, by scann with small spot of light. As the semiconductor is scanned, a voltage is generated which may be used to indicate gross defects as well as the reduction in carrier lifetime due to the defects.
Claims10
A method of semiconductor profiling, the steps of
- a. forming a light beam having a diameter of less than 100.mu.m,
- b. positioning a semiconductor sample of the type which generates a signal voltage in response to optical excitation in an electrolytic solution,
- c. scanning said light beams over said sample in a raster format;
- d. utilizing the signal voltages generated by said sample in response to being scanned by said light beam to determine the presence of anomalities in said sample.
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An apparatus for profiling semiconductors to determine their homogeneity comprising:
- a. means for holding the semiconductor sample of interest in an electrolytic solution,
- b. a light beam source having a diameter of less than 100.mu.m,
- c. electro-optical deflection means for focusing and causing said light beam to scan said sample in a raster format;
- d. signal processing circuit means coupled to said sample for providing output signals proportional to the homogeneity profile of said sample.
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Dependencies are inferred from the claim text.