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US 4,051,273 AGranted
Field effect transistor structure and method of making same
AssigneeIBM Corporation
InventorsShakir Ahmed Abbas, Robert Charles Dockerty
Life of this patent
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Abstract
An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.
Claims10
In the method of fabricating a field effect transistor which includes the steps of:
- forming a composite silicon dioxide-silicon nitride insulating layer over the active regions of said field effect transistor, said active regions including a channel region disposed between source and drain regions;
- depositing a field shield electrode of polycrystalline silicon over a portion of said composite layer;
- forming a conductive silicon dioxide layer over the upper and sidewall surfaces of said polycrystalline silicon layer;
- and
- depositing a gate electrode over said composite layer;
- the improvement comprising:
- forming a layer of highly resistive material between said conductive silicon dioxide layer and said silicon nitride layer prior to the step of forming said field shield electrode;
- said material selected from the group consisting of silicon oxynitride and silicon dioxide.
5 more elements
Dependencies are inferred from the claim text.