Light emitting diode having a short transient response time
AssigneeRCA Corporation
InventorIvan Ladany
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Abstract
A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a second region of silicon doped P type gallium arsenide on the first region and spaced from the substrate. The P-N junction between the first and second regions is a heterojunction, and is the only heterojunction with the second region. The second region is of a thickness, extending from the P-N junction, in the range of 50 to 200 micrometers. The electroluminescent device is capable of transient response time of 0.2 microseconds or less.
Claims10
An electroluminescent device, capable of a transient response time of 0.2 microseconds or less, comprising:
- a body of semiconductor material having a first region of aluminum gallium arsenide of N type conductivity contiguous to a second region of gallium arsenide of P type conductivity, said second region having only silicon as the conductivity modifier, said second region having a heterojunction only with said first region, and said second region being of a thickness, extending from said heterojunction, in the range of about 50 to 200 micrometers;
- a substrate in contact with a surface of said first region opposite said heterojunction;
- and
- means for electrically contacting said body and said substrate.
Dependencies are inferred from the claim text.