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US 4,049,963 AGranted
Photoelectric measuring device
AssigneeCoulter Information Systems, Inc.
InventorManfred R. Kuehnle
Life of this patent
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Abstract
A transparent photocell formed of two thin film layers of a semi-conductor material and an intervening thin film layer of a photoconductor material, a constant voltage being applied across the semi-conductor layers and the current through the cell being detected as a measure of the intensity of light incident on the cell. The thin film nature of the cell enables it to be combined with a lens of an optical system as a plurality of laminae coated onto a surface of said lens.
Claims5
A photoelectric measuring device comprising
- a substrate of optical material,
- a first ohmic layer having a thickness of the order of 50 to 100 A deposited on one surface of said substrate,
- a sputter deposited coating on said first ohmic layer and having a thickness of the order of 300 to 3500 A consisting principally of a wholly inorganic, microcrystalline, photoconductive material deposited with a vertical orientation to its crystal arrangement relative to the surface upon which deposited, said coating being electrically anisotropic and having high photoelectric gain, a dark resistivity of at least 10.sup.12 ohm-centimeters and a ratio of dark to light resistivities of at least about 10.sup.4,
- a second ohmic layer on said photoconductive coating and having a thickness of the same order as said first ohmic layer deposited upon said photoconductive coating,
- said device including substrate, layers and coating having better than 90 percent transmission of radiation at least in the visible spectrum to a degree not materially affecting the integrity of transmission of said radiation through said device and means for detecting current flow between said ohmic layers as a direct quantitative measurement of the radiation passing through, and device.
2 more elements
Dependencies are inferred from the claim text.