Low coercivity iron-silicon material, shields, and process
AssigneeInternational Business Machines Corporation
InventorsNorman George Ainslie, Robert Douglas Hempstead, Swie-In Tan, Erich Philipp Valstyn
Life of this patent
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Abstract
Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250.degree. C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in.sup.2.
Claims3
A substrate having deposited thereon a thin film of iron-silicon made by the process comprising the steps of:
- placing a substrate upon the anode of an R.F. sputtering chamber,
- placing a target of iron-silicon containing about 4% to 7% silicon upon the cathode of said sputtering chamber,
- spacing said cathode and said anode about 1/2 inch to 2 inches apart,
- impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering material from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than 1/2 micron upon the said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, and maintaining a temperature at the anode above 250.degree. C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns,
- stopping the deposition of iron-silicon upon said substrate by removing potential from said target and said substrate after a layer of iron-silicon has been deposited upon said substrate.
A process for manufacturing a substrate having deposited thereon an iron-silicon magnetic thin film coating comprising the steps of:
- placing a substrate upon the anode of an R.F. sputtering chamber,
- placing a target of iron-silicon containing 4% to 7% silicon upon the cathode of said sputtering chamber,
- spacing said cathode and said anode about 1/2 inch to 2 inches apart,
- impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering a thin film coating of iron-silicon from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than about 0.05 micron aggregate thickness of laminated iron-silicon and about 0.4 micron for a single layer film upon said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, with an R.F. input power above the 8 watts/in.sup.2 range and maintaining a temperature at the anode over 250.degree. C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns,
- then stopping the deposition of said coating of iron-silicon upon said substrate by removing potential from said target and said substrate after said coating of iron-silicon has been deposited to a thickness of greater than 0.4 micron upon said substrate for a single film and greater than 0.05 micron thickness for a single layer of a laminated film coating of iron-silicon.
Dependencies are inferred from the claim text.