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AssigneeNippon Electric Co., Ltd.
InventorsMasaki Ogawa, Takashi Furutsuka, Masaoki Ishikawa
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A dual-gate Schottky barrier gate field effect transistor is provided with an intermediate electrode between a first and a second gate electrode. This intermediate electrode forms an ohmic contact with a semiconductor substrate of the transistor. The transistor is produced by etching a first film formed on a planar surface of the substrate by the use of a pair of mask pieces to leave a pair of gate electrodes narrower than the mask pieces and projecting a metal capable of forming an ohmic contact with the semiconductor towards the planar surface perpendicularly thereof. The projected metal provides source and drain electrode on both sides of the gate electrode pair and an intermediate electrode between the gate electrodes. The intermediate electrode may be left floating during operation.
A dual-gate Schottky barrier gate field effect transistor including a substrate of a semiconductor having a planar surface, a pair of first metal film pieces for use as a first and a second gate electrode on said planar surface, and a pair of second metal film pieces for use as a source and a drain electrode on said planar surface on both sides of said pair of first metal film pieces, wherein the improvement comprises an intermediate metal film piece on said planar surface between said first metal film pieces with a space left between said intermediate metal film piece and each of said first metal film pieces, said intermediate metal film piece being of a metal capable of forming an ohmic contact with said semiconductor substrate at least at its portion contiguous to said planar surface.
Dependencies are inferred from the claim text.