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US 4,048,535 AGranted
Lead-tin-telluride photodetector array
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsJohn T. Cox, Michael B. Garber, Marilyn A. Jasper, Paul LoVecchio
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Abstract
A method is provided for manufacturing lead-tin-telluride photodiode arrays which is simple and yet provides excellent yields of high performance devices.
Claims1
A photodiode array comprising:
- a wafer of Pb.sub..8 Sn.sub..2 Te;
- an insulating layer covering most of the exposed surface of said chip defining only a plurality of small rectantular windows wherein the surface of the chip is exposed;
- a thin layer of indium covering all of said insulating layer and all of said rectangular windows;
- and
- a plurality of thick indium lead-out pads mounted on said thin layer, each pad overlapping only a different one of said rectangular windows.
2 more elements
Dependencies are inferred from the claim text.