Hermetic topsealant coating and process for its formation
AssigneeInternational Business Machines Corporation
InventorsPeter Bakos, Irving Memis, John Rasile
Life of this patent
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Abstract
A hermetic topsealant for metal electrodes on components and other microelectronic circuitry is formed by polymerizing a mixture of an unsaturated silane monomer, a bifunctional silane adhesion promoter, a polymeric plasticizer and a stabilizer. The purpose of this abstract is to enable the public and the Patent Office to rapidly determine the subject matter of the technical disclosure of the application. This abstract is neither intended to define the invention of the application nor is it intended to be limiting as to the scope thereof.
Claims13
A process for forming a hermetic seal coating on electronic circuitry comprising applying to said circuitry a mixture which includes:
- a. a vinyl unsaturated silane monomer
- b. a bifunctional silane adhesion promoter
- c. a polymeric plasticizer, and
- d. an organic solvent
- and curing said mixture to form a solid, adherent, cross-linked polysilane coating on said circuitry.
A composition for forming a hermetic seal coating on electronic circuitry comprising a mixture which includes:
- a. a vinyl unsaturated silane monomer
- b. a bifunctional silane adhesion promoter
- c. a polymeric plasticizer, and
- d. an organic solvent.
A process for forming a hermetic seal coating over electronic circuitry, which is supported on the surface of a substrate, comprising applying to said surface and circuitry a mixture which includes:
- a. 0.5 to 10 parts by weight of a vinyl unsaturated silane monomer selected from the group consisting of, pentamethyldisiloxane methylmethacrylate, vinyltrichlorosilane, vinyltriethoxysilane and vinyltris(2-methoxyethoxy)silane;
- b. 0.5 to 10 parts by weight of a bifunctional silane adhesion promoter selected from the group consisting of, gamma-aminopropyltriethoxysilane, beta-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, and N-beta(aminoethyl)-gamma-aminopropyl-trimethoxysilane;
- c. 0.1-15 parts by weight of a polymeric plasticizer selected from the group consisting of, epoxy resins, polyesters, polycarbonates, polychloroprene, polystyrene, alkyd resins, allyl resins, amino resins, polysulfone resins, vinyl polymers and copolymers, urea and melamine resins and amide/imide polymers,
- d. 0.0-80 parts by weight of a stabilizer selected from the group consisting of dimethylacetamide, N N-dimethylaniline, piperidine, 4',4'-dimethoxy-diphenylamine, and phenyl-alpha-naphthylamine, and
- e. an organic solvent in an amount to provide 1-50% by weight concentration of the other ingredients,
- and curing said mixture to form a solid, adherent, cross-linked polysilane coating having a thickness of from about 50 microinches to about 3 mils on said surface and circuitry.
A composition for forming a hermetic seal coating on electronic circuitry comprising a mixture which includes:
- a. 0.5 to 10 parts by weight of, a vinyl unsaturated silane monomer selected from the group consisting of, pentamethyldisiloxane methylmethacrylate, vinyltrichlorosilane, vinyltriethoxysilane and vinyltris(2-methoxyethoxy)silane;
- b. 0.5 to 10 parts by weight of a bifunctional silane adhesion promoter selected from the group consisting of, gamma-aminopropyltriethoxysilane, beta-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, and N-beta(aminoethyl)-gamma-aminopropyl-trimethoxysilane;
- c. 0.1-15 parts by weight of a polymeric plasticizer selected from the group consisting of, epoxy resins, polyesters, polycarbonates, polychloroprene, polystyrene, alkyd resins, allyl resins, amino resins, polysulfone resins, vinyl polymers and copolymers, urea and melamine resins and amide/imide polymers,
- d. 0.0-80 parts by weight of a stabilizer selected from the group consisting of dimethylacetamide, N N-dimethylaniline, piperidine, 4',4'-dimethoxy-diphenylamine, and phenyl-alpha-naphthylamine, and
- e. an organic solvent in an amount to provide 1-50% by weight concentration of the other ingredients.
A process for forming a hermetic seal coating on metal conductor lines on the surface of a substrate having integrated circuit chips electrically bonded thereto comprising:
- applying to said surface a coating material comprises:
- a. 0.5 to 10 parts by weight of, a vinyl unsaturated silane monomer selected from the group consisting of, pentamethyldisiloxane methylmethacrylate, vinyltrichlorosilane, vinyltriethoxysilane and vinyltris(2-methoxyethoxy)silane;
- b. 0.5 to 10 parts by weight of a bifunctional silane adhesion promoter selected from the group consisting of, gamma-aminopropyltriethoxysilane, beta-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, gamma-glycidoxypropyltrimethoxysilane, and N-beta(aminoethyl)-gamma-aminopropyl-trimethoxysilane;
- c. 0.1-15parts by weight of a polymeric plasticizer selected from the group consisting of, epoxy resins, polyesters, polycarbonates, polychloroprene, polystyrene, alkyd resins, allyl resins, amino resins, polysulfone resins, vinyl polymers and copolymers, urea and melamine resins and amide/imide polymers,
- d. 0.0-80 parts by weight of a stabilizer selected from the group consisting of dimethylacetamide, N N-dimethylaniline, piperidine, 4',4'-dimethoxy-diphenylamine, and phenyl-alpha-naphthylamine, and
- e. an organic solvent in an amount to provide 1-50% by weight concentration of the other ingredients,
- said coating material being applied to a wet thickness less than the distance between the substrate surface and the bottom surface of the chip with the solid content of said coating material being adjusted to provide a dry coating thickness on said conductor lines of 400 to 500 microinches, and
- curing said coating material by a three step heating cycle in which the mixture is first dried to a viscous state by heating at temperatures of from about 40.degree. to 75.degree. C, is next polymerized to a solid film by by heating at temperatures of from about 80.degree. to 110.degree. C and is finally cured to a dimensionally stable state by heating at temperatures of from about 115.degree. to 180.degree. C.
Dependencies are inferred from the claim text.