Epitaxial film formation of a light emitting diode and the product thereof
AssigneeIntegrated Display Systems Limited
InventorJack Isaac Hanoka
Life of this patent
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Abstract
The preparation of a semiconductor substrate for epitaxial deposition and the deposition of a solution from which the epitaxial film is formed is carried out at room temperature. The solution is deposited on the condensing surface in two discrete layering operations, the first of which ensures complete wetting of the condensing surface, the second of which ensures junction formation at a prescribed depth. The procedure is particularly useful in forming P Type epitaxial films on N-Type gallium phosphide substrates.
Claims8
A method for forming an epitaxial film for a light emitting diode on a single crystal substrate of semiconductor material of a first conductivity type;
- said method comprising the steps of clea ning the surface of said substrate;
- coating said surface with a thin layer of a first solution from which an epitaxial film of a second conductivity type can be formed;
- wherein said first solution was formed at an elevated temperature, stored in a vessel at slightly above room temperature and applied at normal room temperature;
- agitating said thin layer in a manner and for a time to ensure complete wetting of said surface by said layer;
- adding to said thin layer a second measure of said first solution from said storage vessel to form a second layer of solution substantially thicker than said first layer for determining the depth of a rectifying junction formed in said substrate during a subsequent heating step;
- and heating said coated substrate at a temperature and for a time to form an epitaxial layer.
Dependencies are inferred from the claim text.