Method for manufacturing a high-speed semiconductor device
AssigneeMotorola, Inc.
InventorsJerry L. Bledsoe, Clarence A. Lund
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Abstract
A method for manufacturing high speed semiconductor devices by selectively reducing the minority carrier lifetime in regions susceptible to minority carrier charge storage. The selective reduction is achieved by implanting ions of low atomic weight into the surface of the semiconductor crystal in order to locally reduce the sub-surface lifetime.
Claims6
A method for increasing the switching speed of a semiconductor device comprising the step of selectively reducing minority carrier lifetime by high energy proton implantation.
A method for controlling the relative switching speeds of active devices on a common semiconductor substrate comprising the steps of reducing minority carrier lifetime in preselected active regions by high energy proton implantation.
Dependencies are inferred from the claim text.