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AssigneeHughes Aircraft Company
InventorEliyahou Harari
Estimating the term…
Disclosed is a non-volatile field effect information storage device which can be electrically written and erased. It consists of an insulated gate field effect transistor having a single gate dielectric material formed in two stages. The gate dielectric is made up of two adjacent layers of silicon dioxide, one of which is relatively thin and adjacent to the semiconductor substrate, while the other is relatively thick and implanted with ions at controlled depths and dosages near the interface with the first silicon dioxide layer. With the application of an appropriate control voltage on the gate structure, charges from the adjacent transistor channel region tunnel through the relatively thin layer of silicon dioxide and become stored in the trapping sites introduced by the implanted ions located in the second layer of silicon dioxide and very near the interface between the two silicon dioxide layers. While there, the charges control the conductivity of the channel, and thus the logic state of the transistor.
A process for fabricating a non-volatile field effect memory cell comprising the steps of:
A process for fabricating a non-volatile field effect memory device comprising the steps of:
In an improved process of fabricating a field effect memory cell comprising the steps of forming source, gate and drain regions on a semi-insulating silicon substrate and forming a first layer of silicon dioxide for a gate insulation the improvement which comprises the steps of:
Dependencies are inferred from the claim text.