US 4,047,436 AGranted

Measuring detector and a method of fabrication of said detector

AssigneeCommissariat a l'Energie Atomique

InventorsJean Bernard, Giorgio Frossati, Georges Guernet, Michel Montier, Louise Peccoud nee Toupillier, Daniel Thoulouze

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Abstract

The measuring detector is constituted by the resistance of a given volume of doped semiconductor, there being formed on one face of a semiconducting monocrystal a surface region having a well-determined thickness and a well-determined concentration of doping ions and two electrical contacts at the extremities of said region. The doped surface region is obtained by ion implantation and there is formed on the second face of the monocrystal a metallic coating which has good thermal conductivity and is in good thermal contact with said second face. The detector is primarily applicable to thermometric measurements at very low temperatures below 1.degree. K.

Claims21

Dependent claims

A method of fabricating a thermometric measuring detector for use at very low temperatures of the type constituted by the resistance of a given volumn of a doped semi-conductor, comprising:

providing a semiconductor monocrystal having one type of conductivity, forming by ion implantation on a surface of a semiconductor monocrystal a surface region having a predetermined thickness having the same type conductivity as said monocrystal, and having a predetermined concentration of doping ions greater than the concentration of impurities in said monocrystal, forming electrical contacts at the extremities of said region, and forming a thermally conductive metallic coating on a face of said crystal opposite said surface region bonded to said crystal to be in thermal contact with said crystal.

Dependencies are inferred from the claim text.