Semiconductor devices with improved turn-off characteristics
AssigneeMotorola, Inc.
InventorsLowell E. Clark, Raymond M. Roop, Charles E. Volk
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Abstract
Semiconductor devices, with especial reference to transistors with reduced turn-off times. This improvement includes a low-barrier height metal contact to one of the lightly-doped regions of the device as a replacement for the conventional heavily-doped region or high-low junction structure usually employed for the purpose of providing ohmic contact.
Claims5
In a high voltage semiconductor device including a first region of first conductivity-type, a second semiconductor region of second conductivity-type having at least lightly-doped portion, said lightly-doped portion forming a p-n junction with said first region, and separate first and second metallic means for contacting respectively each of said first and second regions remote from their p-n junction, wherein the improvement comprises said second region having a net impurity doping density of said second type between 3 .times. 10.sup.12 and 10.sup.15 atoms per square centimeter between said p-n junction and said second metallic means.
Dependencies are inferred from the claim text.