Double heterostructure lasers having reduced microstress
AssigneeInternational Standard Electric Corporation
InventorPaul Anthony Kirkby
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Abstract
A conventional construction of light emissive III-V semiconductor device is modified by the inclusion in the active region of the device of not more than 5 atomic percent of a group III or group V substituent of significantly different atomic radius than that of the element for which it is substituted. The microstress field in the neighborhood of dislocation in the active region produces local modification of the concentration of the substituent causing a reduction in the magnitude of the microstress field associated with these dislocations.
Claims7
An improved double heterostructure laser of the type having an active region consisting of Group III-V material flanked by at least one layer of Group III-V material comprising:
- an additional Group III material within the active region composition for providing reduced microstress strain in the laser structure;
- and
- an additional Group III material within the Group III-V material of the flanking layers wherein the Group III material comprises gallium and the additional Group III material comprises indium.
Dependencies are inferred from the claim text.