US 4,047,051 AGranted

Method and apparatus for replicating a charge packet

AssigneeInternational Business Machines Corporation

InventorLawrence Griffith Heller

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Abstract

A method and apparatus for duplicating or replicating an original packet of charge carriers such as electrons or holes while leaving the original charge packet unchanged and still available for further processing is described. A charge-coupled device (CCD) circuit is provided using gate displacement charge flow in combination with a bucket brigade circuit. The CCD circuit includes a first +CCD well, a source diffusion and a second CCD well. An original charge packet is introduced into the first CCD well, the gate of which being precharged to a given source potential. The charge packet in the first CCD well reduces the magnitude of the source potential and it is immediately restored by current flow which in turn causes charge carriers to transfer from the source diffusion into the second CCD well until a charge packet is contained in the second CCD well which is a replica of the original charge packet.

Claims3

Dependent claims

A circuit for entering quantities of electrical charge carriers into a first charge storage well of a solid-state charge-transfer-device of the type having a semiconductor substrate and a plurality of charge transfer means for moving quantities of electrical charge carriers in a controlled manner across said substrate, said circuit comprising:

a source diffusion means located on said semiconductor substrate and producing an inherent depletion capacitance C.sub.d,
an input lead connected to said source diffusion means,
an active device connected between a supply voltage and said input lead, said active device being controlled by a source of reset signal to couple said supply voltage to said source diffusion to raise the potential of said source diffusion to equal a predetermined first precharge potential,
a second charge storage well containing a quantity of original charge Q for providing a voltage .DELTA.V which is applied and coupled to said input lead to vary the potential of said source diffusion for producing and inserting into said first charge storage well of said charge-transfer-device a quantity of charge carriers Q directly proportional to said voltage .DELTA.V and independent of said depletion capacitance C.sub.d,
and an electrical charge drain means located on said semiconductor substrate to remove charge carriers produced by said diffusion when said source diffusion is equal to said predetermined first precharge potential.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 05/625,425Filed 24 Oct 1975
Granted: 6 Sep 1977
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 44/456
Having field effect produced by insulated gate electrodes: structures for regeneration, refreshing or leakage compensation
G11C 19/282
Using semiconductor elements: with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
G11C 19/285
With charge storage in a depletion layer, i.e. charge coupled devices [CCD]: peripheral circuits, e.g. for writing into the first stage; for…
H10D 44/452
Having field effect produced by insulated gate electrodes: input structures