Method for forming semiconductor devices

Abstract

Disclosed is a manufacturing method for semiconductor devices, which comprises the processes of: Forming at least one recess and at least one projecting portion on a surface of semiconductor substrate; applying coating material on the recess and the projecting portion in such a manner that the layer of the coating material in the recess is thicker than that on the projecting portion; providing a bared portion at the top of the projecting portion by removing the applied coated material on the silicon dioxide layer of the semiconductor substrate at a uniform removing rate; and diffusing impurities to form different conductivity region through the bared top portion. The highly advantageous results achieved through the use of this newly developed method are (1) the elimination of a process for the self alignment of mask, (2) the production of highly reliable semiconductor devices, and (3) an increase in the productivity of semiconductor devices.

Dependencies are inferred from the claim text.