Electron bombarded semiconductor device
AssigneeWatkins-Johnson Company
InventorsDavid H. Smith, Richard I. Knight
Life of this patent
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Abstract
An electron bombarded semiconductor amplifier with a simplified target construction where the common point of the diode array is returned to ground enabling the radio frequency bypassing capacitors to be made a smaller size and the dc blocking capacitors to be provided by separate capacitors outside of the vacuum envelope and also optimized.
Claims4
An electron bombarded semiconductor device having an evacuated envelope, an electron gun positioned at one end of said envelope to project an electron beam along said envelope in a predetermined path, and means responsive to an input signal for deflecting said beam from said path, the invention comprising:
- a target within said envelope comprising a pair of spaced semiconductor diode devices each having first and second regions of opposite conductivity types forming a p-n junction with a region adapted to receive said beam, said beam impinging between said devices when it is in said predetermined path and impinging a region of one or the other of said devices when deflected responsive to said input signal, said target including a common ground and means for connecting one region of each of said devices, but of opposite conductivity type, to said common ground;
- a load having one terminal connected to said common ground and the other ac coupled to the other regions of said semiconductor diode devices and means for applying a unidirectional voltage between said common ground and said other regions to reverse bias said diode devices.
Dependencies are inferred from the claim text.