Process for fabricating diffused complementary field effect transistors
AssigneeHarris Corporation
InventorThomas J. Sanders
Life of this patent
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Abstract
In a process for fabricating complementary FETS, wherein a first insulative layer has apertures therein, a second insulative layer doped with N-type impurities is formed over the area in which an N channel device is to be formed and is diffused in a non-oxidizing atmosphere through apertures in the first insulative layer to form the source and drain of an N channel device. Immediately thereafter, an atmosphere containing a P-type impurity is introduced to deposit and diffuse P-type impurities through exposed apertures in the first insulative layer to form the source and drain of a P channel device.
Claims14
In a process for fabricating complementary field effect transistors wherein source and drain apertures are provided through a first insulative layer superimposed on a substrate and each source and drain aperture are separated by a gate superimposed on said substrate, the improvement comprising:
- forming unselectively a second insulative layer doped with N-type impurities;
- selectively removing a portion of said second insulative layer to exposed apertures in which a P channel device is to be formed;
- diffusing said N-type impurities from said second insulative layer into said substrate in a nonoxidizing atmosphere to form an N channel device;
- and
- subsequently changing said nonoxidizing atmosphere to an atmosphere containing P-type impurities to diffuse P-type impurities through said exposed apertures to form said P channel device and further diffuse said N-type impurities.
In a process for fabricating complementary field effect transistors by diffusion to form the source and drain regions in a substrate, the improvement comprising:
- forming a masking layer on said substrate with apertures to expose the areas of said substrate in which said source and drain regions are to be formed;
- forming an insulative layer doped with N-type impurities over the area in which the source and drain regions of an N channel device is to be formed;
- diffusing in a nonoxidizing atmosphere said N-type impurities from said doped insulative layer into said substrate to form said N channel device;
- and
- immediately thereafter introducing a P-type impurity atmosphere to diffuse P-type impurities through exposed apertures to form a P channel device.
Dependencies are inferred from the claim text.