Ferroelectric-photoconductor optical storage

Abstract

This invention is concerned with a ferroelectric photoconductive optical storage, comprising a sandwich arrangement constituted by a plurality of alternating ferroelectric and photoconductive layers enclosed between a pair of transmissive layer electrodes. The material of the ferroelectric layers is selected from bismuth titanate, the electrode material from SnO.sub.2 or InO.sub.2, the layer thickness of the first is about 2.mu. and of the latter between 200 and 300 A, whereas the photoconductive layers, the material of which is selected from CdS, is about 1.mu.. The layers are produced by sputtering. Such a multi-layer storage ensures a diffraction effectivity of about 10 percent and a resolution of 500 lines per millimeter when phase reading is employed at a wavelength of .lambda.= 6000 A.

Dependencies are inferred from the claim text.