Photoconductive films

A photoconductive film comprising;

• a first region having a thickness in a range greater than 100 A and containing Se in which Te and elements capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on an average, respectively,
• a second region disposed on said first region, said second region having a thickness in a range between 200 A and 5000 A and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive,
• a third region disposed on said second region, said third region having a thickness in a range between 500 A and 3,000 A and containing Se in which at least one element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and
• a fourth region disposed on said third region and containing Se in which Te and at least one element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on an average, respectively, said at least one element capable of forming the deep levels in Se being selected from the group consisting of As, Sb, Bi, Si, Ge, and a mixture thereof.