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US 4,040,172 AGranted
Method of manufacturing integral transducer assemblies employing built-in pressure limiting
AssigneeKulite Semiconductor Products, Inc.
InventorsAnthony D. Kurtz, Joseph R. Mallon
Life of this patent
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Abstract
A transducer of an "H" shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.
Claims6
A method for fabricating a semiconductor transducer, comprising the steps of:
- a. forming a first depression on a first surface in a semiconductor wafer, said depression as formed being of a predetermined depth and having a plurality of "finger-like" projections extending from the periphery,
- b. diffusing a serpentine piezoresistor within said depression and having a resistance line width approximately equal to said predetermined depth,
- c. metallizing the surface of said depression to form a series of terminal areas extending into said projections,
- d. covering said depression with a glass sheet,
- e. bonding leads to said terminal areas within said projections.
2 more elements
Dependencies are inferred from the claim text.