US 4,032,952 AGranted

Bulk charge transfer semiconductor device

AssigneeHitachi, Ltd.

InventorsShinya Ohba, Iwao Takemoto, Masaharu Kubo

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Abstract

In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

Claims73

Dependent claims

A bulk charge transfer semiconductor device comprising:

a substrate;
a semiconductor body wherein majority carriers are to be transferred, disposed on the substrate, which is electrically isolated from the substrate;
a series of electrodes disposed over the semiconductor body while being electrically isolated from the semiconductor body;
means for introducing majority carriers into the semiconductor body, disposed on the semiconductor body adjacent one end of said series of electrodes;
means for detecting said introduced majority carriers, disposed on said semiconductor body adjacent the other end of said series of electrodes;
and
means for applying voltages to the electrodes for forming depletion regions within the semiconductor body so that majority carriers are pushed out by said depletion regions toward said detecting means, thereby transferring introduced majority carriers along the semiconductor body;
and wherein
the thickness of the semiconductor body is less than the depth of said depletion regions and the width of the semiconductor body, which is the dimension of the semiconductor body perpendicular to the direction in which the majority carriers are transferred, is less than the total length of the width of an electrode in a direction perpendicular to the transit direction of the majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode toward a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.

6 more elements

A bulk charge semiconductor device comprising:

a semiconductor body of a first conductivity type through which majority carriers within said body are to be transferred;
a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body;
first means, coupled to said semiconductor body, for introducing majority carriers thereinto;
second means, connected to said electrodes, for forming controlled depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes;
and
third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body;
and
wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.

5 more elements

A bulk charge transfer semiconductor device comprising:

a semiconductor body of a first conductivity type through which majority carriers within said body are transferred;
a plurality of spaced-apart electrodes disposed over a principal surface of said semiconductor body;
first means, coupled to said semiconductor body, for introducing majority carriers therein;
second means, connected to said electrodes, for forming first depletion regions extending completely through the thickness of said semiconductor body so as to push out said introduced majority carriers and transferring majority carriers along said body beneath said electrodes by applying voltages to said electrodes;
third means, coupled to said semiconductor body, for detecting majority carriers which have been transferred through said semiconductor body;
and
fourth means, coupled to said semiconductor body, for forming second depletion regions at portions in said semiconductor body corresponding to all the gaps between said electrodes;
and
wherein the thickness of said semiconductor body in a direction perpendicular to the direction of transfer of said majority carriers is less than the total of the width of an electrode in a direction perpendicular to the direction of the transit of majority carriers and parallel to the surface of said semiconductor body and twice the depletion width of the first depletion region spread from the edges of an electrode in a direction perpendicular to said transit direction and parallel to the surface of said semiconductor body.

6 more elements

Dependencies are inferred from the claim text.