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US 4,027,053 AGranted
Method of producing polycrystalline silicon ribbon
AssigneeMotorola, Inc.
InventorIsrael A. Lesk
Life of this patent
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Abstract
A method of producing a ribbon of polycrystalline silicon, which includes contacting a moving surface carrying a layer of particulate semiconductor silicon, with a gaseous silicon source, is disclosed. The gaseous silicon source permeates the layer of particulate silicon and, with heat applied, deposits silicon that knits the silicon particles together to a continuous, coherent polycrystalline ribbon. The ribbon is then separated from the moving surface for further processing, for example, conversion to monocrystalline silicon.
Claims6
A method of producing a ribbon of polycrystalline semiconductor material comprising:
- providing a moving surface having disposed thereon a layer of particulate semiconductor silicon;
- providing a gaseous silicon source;
- heating said particulate silicon to a temperature sufficient to deposit silicon;
- contacting said gaseous silicon source with said particulate semiconductor silicon said temperature to deposit silicon from said source onto said silicon, said deposit of silicon joining said particulate semiconductor silicon together thereby forming a continuous, coherent ribbon of semiconductor material.
1 more element
Dependencies are inferred from the claim text.