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US 4,021,675 AGranted
System for controlling ion implantation dosage in electronic materials
AssigneeHughes Aircraft Company
InventorGordon A. Shifrin
Life of this patent
Estimating the term…
Abstract
Disclosed is an ion implantation process control system wherein the ion dosage in semiconductor wafers is continuously controlled. This control is achieved by controllably and incrementally integrating the ion beam current to provide a control signal, and then utilizing this control signal to provide controlled relative movement between the ion beam and the surface area upon which it fails.
Claims15
A system for controlling the ion implantation dosage in electronic material including:
- (a) means for exposing a target area to an ion beam pattern or raster;
- (b) means for providing relative motion between said target area and said pattern or raster;
- (c) means for sampling and for incrementally integrating the ion beam current a plurality of times as said material is passed through said target area and for generating a control signal in response thereto;
- and
- (d) means responsive to said control signal for providing controlled relative movement between said beam pattern or raster and the actual target surface area upon which said beam falls, whereby a plurality of wafers may be continuously mounted and demounted at a surface which subsequently undergoes controlled relative movement with respect to said ion beam, thereby achieving continuous or quasi-continuous ion implantation dosage cntrol of said wafers.
2 more elements
A process for controlling the ion implantation dosage in electronic materials including the step of:
- (a) exposing a target area to an ion beam pattern or raster,
- (b) sampling and incrementally integrating the ion beam current a plurality of times as said material is passed through said target area and generating a control signal in response thereto, and
- (c) providing controlled incremental relative movement between said beam pattern or raster and the beam target area in response to said control signal, whereby a plurality of wafers may be continuously mounted and demounted at a surface which subsequently undergoes controlled relative movement with respect to said ion beam, thereby achieving continuous or quasi-continuous ion implantation dosage control of said wafers.
A system for controlling the ion implantation dosage in electronic material including:
- (a) particle acceleration means for exposing a target area to a particle beam pattern or raster;
- (b) control means for sampling particle beam current and for generating a control signal as a function of the particle dosage of said beam pattern or raster;
- and
- (c) electromechanical stepping means coupled between said control means and one of said target area or said pattern or raster and responsive to said control signal for, in turn, providing controlled relative movement between said beam pattern or raster and the actual target surface upon which said particle beam falls, whereby the dosage of particles implanted into said target area is maintained at controlled levels, even during unknown variations in intensity of said particle beam pattern or raster.
1 more element
A system for controlling the ion dosage in electronic material including;
- (a) means for exposing a target area to an ion beam pattern or raster;
- (b) means for sampling and for incrementally integrating the ion beam current a plurality of times as said material is passed through said target area and for generating a control signal in response thereto;
- and
- (c) electromechanical drive means coupled between said integrating means and one of said target area or said pattern or raster and responsive to said control signal for providing controlled relative movement between said beam pattern or raster and the actual target surface area upon which said beam falls, whereby a plurality of wafers may be continuously mounted and demounted at a surface which subsequently undergoes controlled relative movement with respect to said ion beam thereby achieving continuous or quasi-continuous ion implantation dosage control of said wafers.
1 more element
A system for controlling the ion implantation dosage in electronic material including:
- (a) means for exposing a target area to an ion beam pattern or raster;
- (b) means for providing relative motion between said target area and said pattern or raster;
- (c) means for sampling and for incrementally integrating the ion beam current a plurality of times as said material is exposed to said ion beam and for generating a control signal in response thereto;
- and
- (d) means responsive to said control signal for providing controlled relative movement between said beam pattern or raster and the actual target surface area upon which said beam falls, whereby a plurality of wafers may be continuously mounted and demounted at a surface which subsequently undergoes controlled relative movement with respect to said ion beam, thereby achieving continuous or quasi-continuous ion implantation dosage control of said wafers.
2 more elements
Dependencies are inferred from the claim text.