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US 4,019,082 AGranted
Electron emitting device and method of making the same
AssigneeRCA Corporation
InventorsGregory Hammond Olsen, Ramon Ubaldo Martinelli, Michael Ettenberg
Life of this patent
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Abstract
A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.
Claims11
An electron emitting device comprising
- a first body of single crystalline gallium arsenide having opposed, substantially flat surfaces,
- a second body of single crystalline indium gallium phosphide on one of the surfaces of said first body, said second body being thinner than said first body, and
- a layer of an electropositive work function reducing material on the other of said surfaces of said first body.
A method of making an electron emitting device comprising the steps of
- epitaxially depositing on a substantially flat substrate of single crystalline gallium arsenide a layer of single crystalline indium gallium phosphide,
- epitaxially depositing on said indium gallium phosphide layer a layer of single crystalline gallium arsenide which is thicker than the indium gallium phosphide layer,
- and then removing at least a portion of said substrate to expose at least a portion of said indium gallium phosphide layer.
Dependencies are inferred from the claim text.