Ion beam separators

A magazine for semiconductor wafers comprising a first chamber for housing a pack of the wafers, a second chamber for rehousing the pack and spaced apart from the first chamber, wafer transfer means for sequential transfer of wafers from the first chamber to the second chamber and means for allowing access of an ion beam to the surface of a wafer during its transfer between the chambers.

An ion beam separator comprising a curved ion beam passageway, a deflection magnet for deflecting an ion beam injected into the passageway, Y scanning means, and a mass defining slit, the position of which is adjustable to select for onward transmission the ion beam of a predetermined ion mass determined by the deflection by the deflecting magnet and the position of the mass defining slit, the said Y scanning means being located adjacent the position where the ion beam exits from the influence of the deflecting magnet and between the said deflecting magnet and the mass defining slit, and the said Y scanning means causing the ion beam to scan in a direction perpendicular to the plane in which the beam is deflected by the deflecting magnet.

An ion beam separator comprising a curved ion beam passageway, a deflecting magnet for deflecting an ion beam injected into the passageway, and Y scanning means located close to the region where the ion beam exits from the influence of the deflecting magnet, said Y scanning means causing the ion beam to scan in a direction perpendicular to the plane in which the beam is deflected by the deflecting magnet, said separator further comprising means for detecting the intensity of the ion beam incident upon a target material, and speed control means, responsive to the detected intensity, for adjusting the speed of X scan to secure the required characteristics of implanted ion dose.

An ion beam separator comprising a curved ion beam passage, a deflecting magnet for deflecting an ion beam injected into the passageway, and Y scanning means located close to the region where the ion beam exits from the influence of the deflecting magnet, said Y scanning means causing the ion beam to scan in a direction perpendicular to the plane in which the beam is deflected by the deflecting magnet, said separator further comprising a beam width defining slit traversed by the ion beam prior to entry into the deflecting field of the said magnet, which slit is rotatable about an axis parallel with the beam height for adjusting the width of beam permitted to pass through the slit.

An ion beam separator comprising a curved ion beam passageway, a deflecting magnet for deflecting an ion beam injected into the passageway, and Y scanning means located close to the region where the ion beam exits from the influence of the deflecting magnet, said Y scanning means causing the ion beam to scan in a direction perpendicular to the plane in which the beam is deflected by the deflecting magnet, said separator further comprising a magazine for semiconductor wafers comprising a first chamber for housing a pack of the wafers, a second chamber for rehousing the pack and spaced apart from the first chamber, wafer transfer means for sequential transfer of wafers from the first chamber to the second chamber and means for allowing access of an ion beam to the surface of a wafer during its transfer between the chambers.