Method of manufacturing a semiconductor device utilizing monocrystalline-polycrystalline growth
AssigneeHitachi, Ltd.
InventorsTadao Kaji, Tsuneaki Kamei, Keiji Miyamoto
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Abstract
In the manufacture of a semiconductor device, when an epitaxially-grown layer is formed on a semiconductor substrate partially formed with an oxide, a polycrystalline layer is formed on the oxide; the polycrystalline part is used as an isolation region for elements to be formed in the epitaxially-grown layer. The oxide for growing the polycrystalline layer is buried and formed in the semiconductor substrate at a depth at which a breakdown voltage between the elements is attained, whereby the width of the isolation region can be made small, so as to increase the density of integration of the semiconductor device.
Claims6
A method of manufacturing a semiconductor device comprising the steps of:
- a. selectively removing semiconductor material from the principal surface of a semiconductor substrate made up of at least one semiconductor layer of first conductivity type and the conductivity type of the semiconductor material of the substrate therebeneath is a second conductivity type, opposite said first conductivity type, so that a PN junction is formed between said one semiconductor layer and the semiconductor material of the substrate therebeneath, to form a groove in said substrate which extends to a prescribed depth in said substrate, said groove extending beyond said PN junction;
- b. filling said groove with a first layer of insulator material;
- and
- c. forming a second semiconductor layer over the entire surface of said one semiconductor layer and said insulator material filling said groove, so as to form polycrystalline semiconductor material on said insulator material and monocrystalline semiconductor material on the adjoining said one semiconductor layer.
Dependencies are inferred from the claim text.