Core memory with improved sense-inhibit recovery time
AssigneeAmpex Corporation
InventorRex John Crookshanks
Life of this patent
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AssigneeAmpex Corporation
InventorRex John Crookshanks
Estimating the term…
A three wire 3D core memory which utilizes the same balanced pairs of sense-inhibit conductors to conduct both high energy common mode inhibit currents and low energy differential mode core switching signals includes pairs of antiparallel Schottky diodes interconnecting the conductor pairs at symmetrical positions therealong intermediate the cores of each memory mat. As high energy common mode inhibit currents are generated small deviations from perfect symmetry of electrical characteristics along the sense-inhibit conductors results in the appearance of differential voltages which are substantial in comparison to switching signal voltages. The sense-inhibit recovery time required for dissipation of these spurious differential voltage signals before a memory read cycle can proceed consumes a substantial portion of a memory cycle for large stacks. The Schottky diodes substantially reduce this recovery time to greatly improve memory cycle time by limiting the differential voltages to the low threshold forward conduction voltage thereof and by appearing as transmission line discontinuities to break up differential voltage signals which remain after termination of an inhibit current into higher frequency harmonic components which are more rapidly attenuated. The Schottky diodes have no substantial effect upon the sensed output switching signals because the threshold forward bias voltage of the Schottky diodes is greater than the peak switching signal voltage.
A magnetic core memory comprising at least one array of magnetic cores;
A three wire three dimensional core memory comprising:
For use in a magnetic memory having approximately balanced pairs of conductors inductively coupled to memory elements between drive ends and sink ends and which conduct approximately equal common mode signals some times between the drive ends and sink ends and conduct differential mode signals at other times, a device for increasing the attenuation rate of differential signals appearing across equivalent points along the conductors upon termination of common mode signals comprising at least one electrical circuit coupled between equivalent points along the pair of conductors with memory elements disposed along the conductors between the equivalent points and sink ends, the circuit including means for blocking the conduction through the circuit of at least a component of a differential mode signal which is below a selected threshold of at least 20 millivolts during at least a part of said other times and conducting at least a component of a differential mode signal which is above a selected threshold during at least a part of said some times.
A core memory stack comprising:
A core memory comprising:
In a magnetic memory having pairs of conductors alternately carrying high energy memory state control signals and lower energy differential switching signals the improvement comprising at least one circuit connected between each pair of said conductors at corresponding positions partway therealong including means for increasing the attenuation of differential components of high energy control signals appearing thereacross while having substantially no effect on at least a low energy component of the differential switching signals sufficient to permit detection thereof.
A core memory comprising:
A magnetic core memory comprising:
Dependencies are inferred from the claim text.