Charge storage tube and method for operating the same
AssigneeIwatsu Electric Co., Ltd.
InventorsHajime Takita, Takehumi Katow
Life of this patent
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Abstract
A charge storage tube includes a target comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate and a metal electrode formed on the insulating layer, wherein a target potential of the target can be changed so that it becomes not only below a first cross-over potential but also over the first cross-over potential. In the charge storage tube, a signal is written in the target by a signal writing means to generate pairs of electron-hole in the target, a surface potential of the insulating layer with the written signal is changed so as to become over the first cross-over potential, and the written signal is read out by scanning electron beams on the target.
Claims11
A charge storage tube comprising a target, means for writing a signal in said target by generating pairs of electron-holes within said target and means for reading out said signal by scanning electron beams on said target, wherein said target comprises a semiconductor substrate with a specific resistance greater than 1 ohm/cm, an insulating layer formed on said semiconductor substrate and a metal electrode with openings formed on said insulating layer, hetero junction diodes being formed between said insulating layer and said semiconductor substrate, means for changing the target potential of said target above and below a first cross-over potential of an accelerating potential of said electron beams.
Dependencies are inferred from the claim text.