Optical information storage material and method of making it
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakeo Ohta, Mutsuo Takenaga
Life of this patent
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Abstract
An optical information storage material having a transparent base and a film deposited on the base, the state of which can be changed between a low optical density state and a high optical density state by the application of electrical, optical or thermal energy. The film is a tellurium oxide having the composition TeO.sub.x1 in which 0<x1<2.0, or a mixture of such a tellurium oxide and vanadium oxide for making it easier to change the state of the film material, or tellurium oxide and lead oxide for increasing the sensitivity of the film. The material is made by vacuum evaporating and depositing the tellurium oxide or the mixture of tellurium oxide with the vanadium or lead oxide from TeO.sub.2 or a solid solution of TeO.sub.2 and lead or vanadium oxide.
Claims11
In an optical information storage material having a base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, the improvement wherein said film comprises TeO.sub.x1 in which 0 <
- x1 <
- 2.0.
An optical information storage material comprising a transparent base and a film deposited on said base the state of which can be changed between the low optical density state and the high optical density state by the application of electrical, optical or thermal energy, said film comprising TeO.sub.x1 in which 0 <
- x1 <
- 2.0.
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO.sub.x1 in which 0 <
- x1 <
- 2.0, comprising evaporating TeO.sub.2 under deoxidizing conditions and depositing the vapor on the base.
A method of making an optical information storage material having a base and a film deposited on said base which is comprised of TeO.sub.x1, in which 0 <X1 <2.0, and an oxide taken from the group consisting of VO.sub.x2 and PbO.sub.x3, in which 0 <
- X2 <
- 2.5 and 0 <
- X3 <
- 1.0, comprising the steps of:
- preparing a solid solution of a tellurium oxide and an oxide taken from the group consisting of a vanadium oxide and a lead oxide;
- and
- evaporating the solid solution under deoxiding conditions and depositing the vapor of the base.
Dependencies are inferred from the claim text.