Dense polycrystalline silicon carbide
AssigneeGeneral Electric Company
InventorSvante Prochazka
Life of this patent
Estimating the term…
Abstract
A dense silicon carbide material having improved electrically conducting properties is disclosed which is prepared by forming a homogeneous dispersion of silicon carbide, a sufficient amount of a boron containing additive, and 3.5-10.0% by weight of silicon nitride and hot pressing the dispersion at a sufficient temperature and pressure whereby a dense substantially nonporous ceramic is formed. The silicon carbide material can be machined by electrical discharge machining or by electrochemical machining.
Claims3
A dense hot pressed electrically conducting silicon carbide ceramic body consisting essentially of silicon carbide, a boron additive selected from the group consisting of boron and boron carbide wherein the amount of the boron additive is equivalent to 0.3-3.0% by weight of boron, and sufficient nitrogen atoms accommodated in the lattice of said silicon carbide making said body electrically conducting with a room temperature resistivity ranging up to about 50 ohm centimeters, said boron additive being in solid solution with the silicon carbide, said ceramic body consisting of a fine grained substantially uniform microstructure, being substantially pore free, and having a density of at least 98% of the theoretical density for silicon carbide.
Dependencies are inferred from the claim text.